Invention Grant
- Patent Title: Power semiconductor module
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Application No.: US16068934Application Date: 2016-02-18
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Publication No.: US10312227B2Publication Date: 2019-06-04
- Inventor: Yukio Nakashima , Takeshi Tanaka
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- International Application: PCT/JP2016/054749 WO 20160218
- International Announcement: WO2017/141407 WO 20170824
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/055 ; H02M7/5387 ; H02M7/00 ; H01L23/28 ; H01L25/07 ; H02M5/458 ; H02M3/158 ; H02P27/08

Abstract:
First and second element pairs formed by connecting FWDs and MOSFETs in antiparallel are connected in series and sealed by resin to configure a core module. In the core module, a first drain electrode, a first source electrode, a second drain electrode, and a second source electrode are exposed to the surface. A cover with terminals is put on the core module. At this time, each of the direct-current positive electrode terminal, the direct-current negative electrode terminal, and the alternating-current terminal of the cover with terminals is electrically connected to each of the first drain electrode, the second source electrode, and the first source electrode and the second drain electrode.
Public/Granted literature
- US20190019785A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2019-01-17
Information query
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