Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US15800162Application Date: 2017-11-01
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Publication No.: US10312255B2Publication Date: 2019-06-04
- Inventor: Yasuhito Yoshimizu , Satoshi Wakatsuki , Yohei Sato , Keiichi Sawa
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/02 ; H01L21/311 ; H01L21/28 ; H01L21/764
Abstract:
According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of insulating films are provided on side surfaces of electrode layers opposing the charge storage films, on portions of surfaces of the electrode layers continuous from the side surfaces and opposing a first air gap between the electrode layers, and on corners of the electrode layers between the portions and the side surfaces. The plurality of insulating films are divided in the stacking direction with a third air gap interposed and without the charge storage films being interposed. The third air gap communicates with the first air gap and the second air gap between the first air gap and the second air gap.
Public/Granted literature
- US20180053781A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2018-02-22
Information query
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