Invention Grant
- Patent Title: Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device
-
Application No.: US15245636Application Date: 2016-08-24
-
Publication No.: US10312428B2Publication Date: 2019-06-04
- Inventor: Shinsuke Ikeuchi , Toshimaro Yoneda , Yoshitaka Matsuki , Naoyuki Endo
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo-Shi, Kyoto-Fu
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Nagaokakyo-Shi, Kyoto-Fu
- Agency: Arent Fox LLP
- Priority: JP2014-103352 20140519
- Main IPC: H01L41/187
- IPC: H01L41/187 ; C23C14/08 ; H01L41/316 ; H01L41/332 ; C04B35/465 ; C04B35/622 ; C23C14/34 ; C23C14/35 ; H01J37/34 ; H01L41/047 ; H01L41/09 ; C04B35/499
Abstract:
A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.
Public/Granted literature
Information query
IPC分类:
