- 专利标题： Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device
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申请号： US15245636申请日： 2016-08-24
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公开(公告)号： US10312428B2公开(公告)日： 2019-06-04
- 发明人: Shinsuke Ikeuchi , Toshimaro Yoneda , Yoshitaka Matsuki , Naoyuki Endo
- 申请人： Murata Manufacturing Co., Ltd.
- 申请人地址： JP Nagaokakyo-Shi, Kyoto-Fu
- 专利权人： MURATA MANUFACTURING CO., LTD.
- 当前专利权人： MURATA MANUFACTURING CO., LTD.
- 当前专利权人地址： JP Nagaokakyo-Shi, Kyoto-Fu
- 代理机构： Arent Fox LLP
- 优先权： JP2014-103352 20140519
- 主分类号： H01L41/187
- IPC分类号： H01L41/187 ; C23C14/08 ; H01L41/316 ; H01L41/332 ; C04B35/465 ; C04B35/622 ; C23C14/34 ; C23C14/35 ; H01J37/34 ; H01L41/047 ; H01L41/09 ; C04B35/499
摘要：
A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.
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