Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15849526Application Date: 2017-12-20
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Publication No.: US10319679B2Publication Date: 2019-06-11
- Inventor: Mengkai Zhu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201611159736 20161215
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/66 ; H01L23/528 ; H01L21/762 ; H01L21/033 ; H01L29/06 ; H01L29/78 ; H01L21/74

Abstract:
A semiconductor device includes: a substrate having a first semiconductor layer, an insulating layer, and a second semiconductor layer; an active device on the substrate; an interlayer dielectric (ILD) layer on the active device; a first contact plug adjacent to the active device; and a second contact plug in the ILD layer and electrically connected to the active device. Preferably, the first contact plug includes a first portion in the insulating layer and the second semiconductor layer and a second portion in the ILD layer, in which a width of the second portion is greater than a width of the first portion.
Public/Granted literature
- US20180174966A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-06-21
Information query
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