Invention Grant
- Patent Title: Quantum dots, production methods thereof, and electronic devices including the same
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Application No.: US15335700Application Date: 2016-10-27
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Publication No.: US10323179B2Publication Date: 2019-06-18
- Inventor: Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2015-0150441 20151028
- Main IPC: C08K3/16
- IPC: C08K3/16 ; B82Y20/00 ; B82Y40/00 ; C09K11/02 ; C09K11/61 ; C09K11/66 ; C09K11/88 ; H01L27/32
Abstract:
A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
Public/Granted literature
- US10597580B2 Quantum dots, production methods thereof, and electronic devices including the same Public/Granted day:2020-03-24
Information query
