- 专利标题: Magnetic material sputtering target and manufacturing method thereof
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申请号: US15702777申请日: 2017-09-13
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公开(公告)号: US10325761B2公开(公告)日: 2019-06-18
- 发明人: Shin-ichi Ogino , Yuichiro Nakamura
- 申请人: JX Nippon Mining & Metals Corporation
- 申请人地址: JP Tokyo
- 专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Howson & Howson LLP
- 优先权: JP2012-059383 20120315
- 主分类号: H01J37/34
- IPC分类号: H01J37/34 ; C23C14/34 ; G11B5/851 ; C22C38/00 ; C22C33/02 ; C22C32/00 ; C22C19/07 ; C22C1/10 ; B22F3/15 ; C04B35/645 ; C22C27/04 ; C22F1/10
摘要:
Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object is to provide a magnetic material target, in particular, a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.
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