Invention Grant
- Patent Title: Light source for lithography exposure process
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Application No.: US16002180Application Date: 2018-06-07
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Publication No.: US10331035B2Publication Date: 2019-06-25
- Inventor: Cheng-Hao Lai , Han-Lung Chang , Li-Jui Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00

Abstract:
A method for generating a radiation light in a lithography exposure system. The method includes producing a predetermined gas pressure in a storage chamber to supply a first load of a target fuel in the storage chamber via a nozzle. The method further includes irradiating the target fuel from the nozzle with a laser to generate the radiation light. The method also includes increasing the gas pressure in a buffer chamber which receives a second load of target fuel to the predetermined gas pressure. In addition, the method includes actuating the flow of the target fuel from the buffer chamber to the storage chamber.
Public/Granted literature
- US20190137882A1 LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS Public/Granted day:2019-05-09
Information query
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