- 专利标题: Array substrate and manufacturing method thereof
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申请号: US15567786申请日: 2017-03-03
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公开(公告)号: US10332807B2公开(公告)日: 2019-06-25
- 发明人: Yudong Liu , Rongcheng Liu , Yunhai Wan
- 申请人: BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- 申请人地址: CN Beijing CN Anhui
- 专利权人: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- 当前专利权人: BOE Technology Group Co., Ltd.,Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- 当前专利权人地址: CN Beijing CN Anhui
- 代理机构: Banner & Witcoff, Ltd.
- 优先权: CN201610284394 20160429
- 国际申请: PCT/CN2017/075596 WO 20170303
- 国际公布: WO2017/185877 WO 20171102
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; H01L21/4757 ; H01L21/84 ; H01L27/12 ; H01L21/02
摘要:
An array substrate and a manufacturing method thereof are provided. The method for manufacturing the array substrate includes: forming a passivation layer on a base substrate; forming photoresist on the passivation layer, and forming a first photoresist pattern including a photoresist-completely-retained region, a photoresist-partially-retained region and a photoresist-completely-removed region, by exposure and development processes; forming a first through hole in the passivation layer by etching the passivation layer with the first photoresist pattern as a mask; forming a second photoresist pattern by performing ashing on the first photoresist pattern to remove the photoresist in the photoresist-partially-retained region and reduce a thickness of the photoresist in the photoresist-completely-retained region; and etching the passivation layer with the second photoresist pattern as a mask, so as to reduce a thickness of the passivation layer in the photoresist-partially-retained region.
公开/授权文献
- US20180211888A1 Array Substrate and Manufacturing Method Thereof 公开/授权日:2018-07-26
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