Invention Grant
- Patent Title: Metal line and thin film transistor
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Application No.: US16013410Application Date: 2018-06-20
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Publication No.: US10332916B2Publication Date: 2019-06-25
- Inventor: Dong Min Lee , Sang Won Shin , Hyun Eok Shin
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-Si, Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-Si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2017-0134845 20171017
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L27/12 ; H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L21/285 ; H01L29/49 ; H01L29/786
Abstract:
A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiNx), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).
Public/Granted literature
- US20190115369A1 METAL LINE AND THIN FILM TRANSISTOR Public/Granted day:2019-04-18
Information query
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