Invention Grant
- Patent Title: Self-aligned contact (SAC) on gate for improving metal oxide semiconductor (MOS) varactor quality factor
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Application No.: US15686827Application Date: 2017-08-25
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Publication No.: US10333007B2Publication Date: 2019-06-25
- Inventor: Ye Lu , Yun Yue , Chuan-Hsing Chen , Bin Yang , Lixin Ge , Ken Liao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L29/66 ; H01L29/423 ; H01L29/45 ; H01L23/482 ; H01L23/485 ; H01L23/66
Abstract:
A short-channel metal oxide semiconductor varactor may include a source region of a first polarity having a source via contact. The varactor may further include a drain region of the first polarity having a drain via contact. The varactor may further include a channel region of the first polarity between the source region and the drain region. The channel region may include a gate. The varactor may further include at least one self-aligned contact (SAC) on the gate and between the source via contact and the drain via contact.
Public/Granted literature
- US20180366592A1 SELF-ALIGNED CONTACT (SAC) ON GATE FOR IMPROVING METAL OXIDE SEMICONDUCTOR (MOS) VARACTOR QUALITY FACTOR Public/Granted day:2018-12-20
Information query
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