Invention Grant
- Patent Title: Strain relief epitaxial lift-off via pre-patterned mesas
-
Application No.: US15558230Application Date: 2016-03-18
-
Publication No.: US10340187B2Publication Date: 2019-07-02
- Inventor: Stephen R. Forrest , Kyusang Lee , Dejiu Fan
- Applicant: The Regents Of The University Of Michigan
- Applicant Address: US MI Ann Arbor
- Assignee: The Regents of the University of Michigan
- Current Assignee: The Regents of the University of Michigan
- Current Assignee Address: US MI Ann Arbor
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- International Application: PCT/US2016/023171 WO 20160318
- International Announcement: WO2016/149629 WO 20160922
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L31/18 ; H01L21/78 ; C30B33/08 ; C09K13/00 ; H01L33/00
Abstract:
Disclosed herein are methods to eliminate or reduce the peeling-off of epitaxial lifted-off thin film epilayers on secondary host substrates that allow for the fabrication of high yield ELO processed thin film devices. The methods employ patterned strain-relief trenches.
Public/Granted literature
- US20180047627A1 STRAIN RELIEF EPITAXIAL LIFT-OFF VIA PRE-PATTERNED MESAS Public/Granted day:2018-02-15
Information query
IPC分类:
