- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US16128479申请日： 2018-09-11
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公开(公告)号： US10340367B2公开(公告)日： 2019-07-02
- 发明人: Yu-Ming Lin , Ken-Ichi Goto
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L21/02 ; H01L21/768 ; H01L23/535 ; H01L29/10 ; H01L29/16 ; H01L29/24 ; H01L29/78
摘要：
A semiconductor device including a Fin FET device includes a fin structure protruding from a substrate layer and having a length extending in a first direction. A channel layer is formed on the fin structure. A gate stack including a gate electrode layer and a gate dielectric layer extending in a second direction perpendicular to the first direction is formed over the channel layer covering a portion of the length of the fin structure. The source and drain contacts are formed over trenches that extend into a portion of a height of the fin structure.
公开/授权文献
- US20190019882A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2019-01-17
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