- Patent Title: Magnetoresistance element with improved response to magnetic fields
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Application No.: US15886032Application Date: 2018-02-01
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Publication No.: US10347277B2Publication Date: 2019-07-09
- Inventor: Paolo Campiglio , Bryan Cadugan , Claude Fermon , Rémy Lassalle-Balier
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US NH Manchester FR Paris
- Assignee: Allegro MicroSystems, LLC,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: Allegro MicroSystems, LLC,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: US NH Manchester FR Paris
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G01R33/09 ; H01F10/32 ; H01L43/08 ; G01R33/00 ; H01L43/02 ; H01L43/10 ; H01L43/12 ; H01F41/30
Abstract:
A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
Public/Granted literature
- US20180158475A1 Magnetoresistance Element with Improved Response to Magnetic Fields Public/Granted day:2018-06-07
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