Invention Grant
- Patent Title: Plasma processing system, electron beam generator, and method of fabricating semiconductor device
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Application No.: US15870800Application Date: 2018-01-12
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Publication No.: US10347468B2Publication Date: 2019-07-09
- Inventor: Yeongkwang Lee , Sunggil Kang , Sang Ki Nam , Kwangyoub Heo , Kyuhee Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2017-0137423 20171023
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/683

Abstract:
A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.
Public/Granted literature
- US20190122860A1 PLASMA PROCESSING SYSTEM, ELECTRON BEAM GENERATOR, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2019-04-25
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