Invention Grant
- Patent Title: Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device STR
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Application No.: US15593197Application Date: 2017-05-11
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Publication No.: US10347511B2Publication Date: 2019-07-09
- Inventor: Steven Verhaverbeke , Han-Wen Chen , Roman Gouk
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/677 ; H01L21/02 ; B08B3/08 ; B08B7/00
Abstract:
Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.
Public/Granted literature
- US20170250094A1 STICTION-FREE DRYING PROCESS WITH CONTAMINANT REMOVAL FOR HIGH-ASPECT RATIO SEMICONDUCTOR DEVICE STR Public/Granted day:2017-08-31
Information query
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