- 专利标题： Semiconductor component comprising copper metallizations
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申请号： US14287124申请日： 2014-05-26
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公开(公告)号： US10347580B2公开(公告)日： 2019-07-09
- 发明人: Matthias Stecher
- 申请人： INFINEON TECHNOLOGIES AUSTRIA AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102007046556 20070928
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L23/00 ; H01L23/528 ; H01L23/522 ; H01L29/78
摘要：
A semiconductor component having improved thermomechanical durability has in a semiconductor substrate at least one cell comprising a first main electrode zone, a second main electrode zone and a control electrode zone lying in between. For making contact with the main electrode zone, at least one metallization layer composed of copper or a copper alloy is provided which is connected to at least one bonding electrode which likewise comprises copper or a copper alloy.
公开/授权文献
- US20140252627A1 SEMICONDUCTOR COMPONENT COMPRISING COPPER METALLIZATIONS 公开/授权日：2014-09-11
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