Invention Grant
- Patent Title: Electrostatic discharge guard ring with snapback protection
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Application No.: US15291564Application Date: 2016-10-12
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Publication No.: US10347621B2Publication Date: 2019-07-09
- Inventor: Sunglyong Kim , David LaFonteese , Seetharaman Sridhar , Sameer Pendharkar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Tuenlap Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/78 ; H01L29/10 ; H01L29/06

Abstract:
An electrostatic discharge (ESD) protection structure that provides snapback protections to one or more high voltage circuit components. The ESD protection structure can be integrated along a peripheral region of a high voltage circuit, such as a high side gate driver of a driver circuit. The ESD protection structure includes a bipolar transistor structure interfacing with a PN junction of a high voltage device, which is configured to discharge the ESD current during an ESD event. The bipolar transistor structure has a collector region overlapping the PN junction, a base region embedded with sufficient pinch resistance to launch the snapback protection, and an emitter region for discharging the ESD current.
Public/Granted literature
- US20180102357A1 ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION Public/Granted day:2018-04-12
Information query
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