- 专利标题: Semiconductor devices
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申请号: US15814824申请日: 2017-11-16
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公开(公告)号: US10347641B2公开(公告)日: 2019-07-09
- 发明人: Jihoon Kim , Wonchul Lee
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2017-0066259 20170529
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L49/02
摘要:
A semiconductor device includes a substrate including a cell region and peripheral region and bottom electrodes on the substrate. The bottom electrodes are arranged in a first row and a second row each extending in a first direction. The first row and the second row are adjacent to each other in a second direction perpendicular to the first direction. The bottom electrodes in the first row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a first distance in the first direction. The bottom electrodes in the second row include an outermost bottom electrode and a next outermost bottom electrode that are separated by a second distance in the first direction. The outermost bottom electrode in the first row is on the peripheral region of the substrate. The outermost bottom electrode in the second row is on the cell region of the substrate.
公开/授权文献
- US20180342519A1 SEMICONDUCTOR DEVICES 公开/授权日:2018-11-29
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