Invention Grant
- Patent Title: Wideband transimpedance amplifier circuit
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Application No.: US15872911Application Date: 2018-01-16
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Publication No.: US10348255B1Publication Date: 2019-07-09
- Inventor: Tai-Hsing Lee , Tsai-Kan Chien
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Priority: TW106143937A 20171214
- Main IPC: H03F3/16
- IPC: H03F3/16 ; H03F3/08 ; H03G3/30 ; H03F3/45

Abstract:
A wideband transimpedance amplifier circuit is provided. The wideband transimpedance amplifier circuit includes a common-gate transistor, a bias current controlling circuit and an amplifier circuit. The bias current controlling circuit is coupled to a source of the common-gate transistor. The amplifier circuit is coupled to a drain of the common-gate transistor. The bias current controlling circuit adjusts the input impedance of the wideband transimpedance amplifier circuit according to the output signal of the amplifier circuit.
Public/Granted literature
- US20190190466A1 WIDEBAND TRANSIMPEDANCE AMPLIFIER CIRCUIT Public/Granted day:2019-06-20
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