Invention Grant
- Patent Title: Sputtering target and method for producing same
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Application No.: US15027436Application Date: 2013-10-07
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Publication No.: US10351946B2Publication Date: 2019-07-16
- Inventor: Kazunori Igarashi , Muneaki Watanabe , Yuuki Yoshida , Kouichi Ishiyama , Satoru Mori
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- International Application: PCT/JP2013/077874 WO 20131007
- International Announcement: WO2015/052848 WO 20150416
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34 ; C22C9/00 ; B22F3/10 ; C22C1/04 ; B22F1/00 ; C23C14/14

Abstract:
Provided are a sputtering target composed of a Cu—Ga sintered compact that has a further reduced oxygen content and can suppress abnormal discharges, and a method for producing the same. The sintered compact has a component composition containing a Ga content of 20 at % or higher and less than 30 at % with the balance being Cu and inevitable impurities, and has an oxygen content of 100 ppm or lower and an average grain size of 100 μm or less, and exhibits the diffraction peaks assigned to the γ and ζ phases of CuGa as observed in X-ray diffraction, wherein the main peak intensity of the diffraction peaks assigned to the ζ phase is 10% or higher relative to that of the diffraction peaks assigned to the γ phase.
Public/Granted literature
- US20160237551A1 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME Public/Granted day:2016-08-18
Information query
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