Low thermal budget crystallization of amorphous metal silicides

Invention Grant

US10354882B2 Low thermal budget crystallization of amorphous metal silicides 有权

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Patent Title: Low thermal budget crystallization of amorphous metal silicides
Application No.: US15963451

Application Date: 2018-04-26
Publication No.: US10354882B2

Publication Date: 2019-07-16
Inventor: Bencherki Mebarki , Xianmin Tang , Sundar Ramamurthy , Jerome Machillot
Applicant: Applied Materials, Inc.
Applicant Address: US CA Santa Clara
Assignee: Applied Materials, Inc.
Current Assignee: Applied Materials, Inc.
Current Assignee Address: US CA Santa Clara
Agency: Servilla Whitney LLC
Main IPC: H01L21/285
IPC: H01L21/285 ; H01L21/324

Low thermal budget crystallization of amorphous metal silicides

Abstract:

Methods for forming a metal silicide film with low resistivity at low temperature are described. A metal silicide film is formed on a substrate surface and annealed at high pressure and low temperature.

Public/Granted literature

US20180315609A1 Low Thermal Budget Crystallization Of Amorphous Metal Silicides Public/Granted day:2018-11-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/28	....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的
H01L21/283	.....用于电极的导电材料或绝缘材料的沉积
H01L21/285	......气体或蒸气的沉积，例如冷凝