Invention Grant
- Patent Title: Contact element structure of a semiconductor device
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Application No.: US16279550Application Date: 2019-02-19
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Publication No.: US10354918B2Publication Date: 2019-07-16
- Inventor: Jim Shih-Chun Liang
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/77
- IPC: H01L21/77 ; H01L27/32 ; H01L27/12 ; H01L21/02 ; H01L21/8234 ; H01L21/768 ; H01L21/265
Abstract:
A contact element structure of a semiconductor device includes an opening positioned in an insulating material layer, the insulating material layer being positioned above a semiconductor substrate, and the opening having an upper sidewall portion, a lower sidewall portion, and a bottom surface portion. An insulating liner portion is positioned within the opening, the insulating liner portion covering the insulating material layer at the upper sidewall portion but not covering the insulating material layer at the lower sidewall portion. A contact liner is positioned within the opening and covers the insulating liner portion, the insulating material layer at the lower sidewall portion, and the insulating material layer at the bottom surface portion, and a conductive material is positioned in the opening and covers the contact liner.
Public/Granted literature
- US20190181044A1 CONTACT ELEMENT STRUCTURE OF A SEMICONDUCTOR DEVICE Public/Granted day:2019-06-13
Information query
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