Invention Grant
- Patent Title: Graphene as interlayer dielectric
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Application No.: US15687362Application Date: 2017-08-25
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Publication No.: US10354955B2Publication Date: 2019-07-16
- Inventor: Ye Lu , Bin Yang , Junjing Bao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/528 ; H01L23/522 ; H01L21/311 ; H01L21/768 ; H01L21/02 ; C01B32/182 ; H01L29/78 ; H01L21/8234
Abstract:
An integrated circuit may include multiple back-end-of-line (BEOL) interconnect layers. The BEOL interconnect layers may include conductive lines and conductive vias. The integrated circuit may further include an interlayer dielectric (ILD) between the BEOL interconnect layers. The ILD may include the conductive lines and the conductive vias. At least a portion of the ILD may include a low-K insulating graphene alloy.
Public/Granted literature
- US20180366413A1 GRAPHENE AS INTERLAYER DIELECTRIC Public/Granted day:2018-12-20
Information query
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