Invention Grant
- Patent Title: Substrate structure, semiconductor package including the same, and method for manufacturing the same
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Application No.: US15665289Application Date: 2017-07-31
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Publication No.: US10354969B2Publication Date: 2019-07-16
- Inventor: Yu-Lin Shih , Chih-Cheng Lee
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/00
Abstract:
A substrate structure includes a dielectric layer, a first circuit layer, at least one conductive structure and a first protective layer. The first circuit layer is disposed adjacent to a first surface of the dielectric layer. The conductive structure includes a first portion and a second portion. The first portion is disposed on the first circuit layer. The first protective layer is disposed on the dielectric layer and contacts at least a portion of a sidewall of the first portion of the conductive structure. The first circuit layer and the conductive structure are integrally formed.
Public/Granted literature
- US20190035753A1 SUBSTRATE STURCTURE, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-01-31
Information query
IPC分类:
