A method is provided that includes forming a first vertically-oriented transistor above a substrate, the first vertically-oriented transistor comprising a first sidewall gate disposed in a first direction, forming a second vertically-oriented transistor above the substrate, the second vertically-oriented transistor including a second sidewall gate disposed in the first direction, and forming an air gap chamber above the substrate disposed between the first sidewall gate and the second sidewall gate, and extending in the first direction, the air gap chamber including an air gap.