Invention Grant
- Patent Title: Atomic layer deposition for photovoltaic devices
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Application No.: US15976308Application Date: 2018-05-10
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Publication No.: US10355160B2Publication Date: 2019-07-16
- Inventor: Jeehwan Kim , David B. Mitzi , Byungha Shin , Teodor K. Todorov , Mark T. Winkler
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/0264 ; H01L31/0749 ; H01L31/18 ; H01L31/0216 ; H01L31/032 ; H01L31/072

Abstract:
A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
Public/Granted literature
- US20180261710A1 ATOMIC LAYER DEPOSITION FOR PHOTOVOLTAIC DEVICES Public/Granted day:2018-09-13
Information query
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