- 专利标题: Semiconductor device and electronic device
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申请号: US15706984申请日: 2017-09-18
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公开(公告)号: US10355673B2公开(公告)日: 2019-07-16
- 发明人: Roh Yamamoto
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2016-191724 20160929
- 主分类号: H03B1/00
- IPC分类号: H03B1/00 ; H03K3/00 ; H03K3/356 ; G09G3/20 ; G09G3/36 ; G11C11/412 ; H03K3/012 ; H03K19/00 ; G11C19/28 ; H03K19/0185
摘要:
An object is to provide a level shift circuit that operates stably. A semiconductor device includes a level shift circuit including first to fourth transistors and a buffer circuit. One of a source and a drain (S/D) of the first transistor is connected to one of a source and a drain of the second transistor. The other of the source and the drain of the second transistor is connected to one of a source and a drain of the third transistor. A gate of the first transistor and a gate of the fourth transistor are connected to the other of the source and the drain of the second transistor and the one of the source and the drain of the third transistor. A gate of the third transistor is connected to a wiring to which an input signal is input. An input terminal of the buffer circuit is connected to one of a source and a drain of the fourth transistor. An output terminal of the buffer circuit is connected to a gate of the second transistor and a wiring to which an output signal is output.
公开/授权文献
- US20180091121A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 公开/授权日:2018-03-29
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