Invention Grant
- Patent Title: Lithography model for three-dimensional patterning device
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Application No.: US14766408Application Date: 2014-02-04
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Publication No.: US10359704B2Publication Date: 2019-07-23
- Inventor: Peng Liu
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- International Application: PCT/EP2014/052109 WO 20140204
- International Announcement: WO2014/127985 WO 20140828
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A computer-implemented method for simulating a scattered radiation field of a patterning device including one or more features, in a lithographic projection apparatus, the method including: determining a scattering function of the patterning device using one or more scattering functions of feature elements of the one or more features; wherein at least one of the one or more features is a three-dimensional feature, or the one or more scattering functions characterize scattering of incident radiation fields at a plurality of incident angles on the feature elements.
Public/Granted literature
- US20150378264A1 A LITHOGRAPHY MODEL FOR THREE-DIMENSIONAL PATTERNING DEVICE Public/Granted day:2015-12-31
Information query
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