Invention Grant
- Patent Title: Semiconductor structure and device formed using selective epitaxial process
-
Application No.: US14997683Application Date: 2016-01-18
-
Publication No.: US10361201B2Publication Date: 2019-07-23
- Inventor: Qi Xie , Vladimir Machkaoutsan , Jan Willem Maes
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer, L.L.P.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L29/06 ; H01L29/165
Abstract:
Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both n-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques.
Public/Granted literature
- US20160133628A1 SEMICONDUCTOR STRUCTURE AND DEVICE AND METHODS OF FORMING SAME USING SELECTIVE EPITAXIAL PROCESS Public/Granted day:2016-05-12
Information query
IPC分类:
