Invention Grant
- Patent Title: Light emitting device and electronic device
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Application No.: US15927436Application Date: 2018-03-21
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Publication No.: US10361258B2Publication Date: 2019-07-23
- Inventor: Shunpei Yamazaki , Masahiro Katayama , Shingo Eguchi , Yoshiaki Oikawa , Ami Nakamura , Satoshi Seo , Kaoru Hatano
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2009-002567 20090108
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L51/00 ; H01L51/52 ; H05B33/02 ; H05B33/04 ; H05B33/12 ; H01L29/786

Abstract:
Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element faulted over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof.
Public/Granted literature
- US20180212006A1 Light Emitting Device and Electronic Device Public/Granted day:2018-07-26
Information query
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