Invention Grant
- Patent Title: Semiconductor structure having air gap between gate electrode and distal end portion of active area
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Application No.: US15655909Application Date: 2017-07-21
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Publication No.: US10366993B2Publication Date: 2019-07-30
- Inventor: Feng-Yi Chang , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710521095 20170630
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/06 ; H01L29/49
Abstract:
A semiconductor structure includes a semiconductor substrate having a trench isolation region formed therein. A conductive gate electrode is buried in the trench isolation region. An air gap is disposed between the conductive gate electrode and the semiconductor substrate.
Public/Granted literature
- US20190006368A1 SEMICONDUCTOR STRUCTURE HAVING AIR GAP BETWEEN GATE ELECTRODE AND DISTAL END PORTION OF ACTIVE AREA Public/Granted day:2019-01-03
Information query
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