According to various embodiments, a method for processing a wafer may include scanning a focused laser beam over the wafer to form a defect structure within the wafer, the defect structure defining a first region of the wafer located at a first side of the defect structure and a second region of the wafer located at a second side of the defect structure opposite the first side, and an edge region laterally surrounding the defect structure and extending from a first surface of the wafer to a second surface of the wafer opposite the first surface. A surface area of the first region is greater than a surface area of the edge region, and the second region is connected to the first region by the edge region. The method may further include, separating the first region and the second region from each other along the defect structure, with the first region remaining in one piece.