Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15677190Application Date: 2017-08-15
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Publication No.: US10373949B2Publication Date: 2019-08-06
- Inventor: Yan-Liang Ji , Cheng-Hua Lin , Chih-Chung Chiu
- Applicant: MEDIATEK Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/06 ; H01L23/528 ; H01L21/8234 ; H01L29/66 ; H01L49/02
Abstract:
A semiconductor device includes a semiconductor substrate and a passive component. The passive component is formed on the semiconductor substrate and includes a first polysilicon (poly) layer, a salicide blockage (SAB) layer and a first salicide layer. The SAB layer is formed on the first poly layer. The first salicide layer is formed on the SAB layer.
Public/Granted literature
- US20180240794A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-08-23
Information query
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