Invention Grant
- Patent Title: Flexible bimodal sensor
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Application No.: US15200293Application Date: 2016-07-01
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Publication No.: US10374074B2Publication Date: 2019-08-06
- Inventor: Jihyun Bae , Nae-Eung Lee , Doil Kim , Thanh Tien Nguyen , Sunghoon Lee , Sanghun Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Applicant Address: KR Suwon-si KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee Address: KR Suwon-si KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2015-0094939 20150702
- Main IPC: H01L29/78
- IPC: H01L29/78 ; A61B5/0205 ; G01L9/00 ; G01K7/16 ; A61B5/024 ; A61B5/01 ; A61B5/021 ; A61B5/0245 ; A61B5/00

Abstract:
A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.
Public/Granted literature
- US20170000358A1 FLEXIBLE BIMODAL SENSOR Public/Granted day:2017-01-05
Information query
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