Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15713077Application Date: 2017-09-22
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Publication No.: US10374096B2Publication Date: 2019-08-06
- Inventor: Miyuki Ishikawa , Arichika Ishida , Masayoshi Fuchi , Hajime Watakabe , Takashi Okada
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-130259 20140625
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L29/66 ; H01L21/441 ; H01L21/465 ; H01L21/467 ; H01L29/417 ; H01L29/786
Abstract:
According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.
Public/Granted literature
- US20180013006A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2018-01-11
Information query
IPC分类:
