发明授权
- 专利标题： Memory arrays
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申请号： US15641704申请日： 2017-07-05
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公开(公告)号： US10374101B2公开(公告)日： 2019-08-06
- 发明人: Arup Bhattacharyya
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Brooks, Cameron & Huebsch, PLLC
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/1157 ; H01L21/28 ; H01L29/66 ; G11C17/12 ; G11C16/04 ; G11C16/16
摘要：
In an example, a memory array may include a memory cell around at least a portion of a semiconductor. The memory cell may include a gate, a first dielectric stack to store a charge between a first portion of the gate and the semiconductor, and a second dielectric stack to store a charge between a second portion of the gate and the semiconductor, the second dielectric stack separate from the first dielectric stack.
公开/授权文献
- US20190013415A1 MEMORY ARRAYS 公开/授权日：2019-01-10
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