Provided is a semiconductor device for radio frequency switch that includes an SOI substrate and a gate electrode. The SOI substrate includes a buried oxide film and a semiconductor layer on a carrier substrate. The gate electrode is provided on the semiconductor layer. The semiconductor layer includes a first area below the gate electrode and a second area other than the first area. A third area is provided in at least part of the second area. A fourth area is provided in at least part of the first area. The fourth area has a different thickness from a thickness of the third area.