Invention Grant
- Patent Title: Device including semiconductor substrate containing gallium nitride and method for producing the same
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Application No.: US15589016Application Date: 2017-05-08
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Publication No.: US10378124B2Publication Date: 2019-08-13
- Inventor: Masaki Fujikane
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-100006 20160518; JP2016-164176 20160824
- Main IPC: C30B29/40
- IPC: C30B29/40 ; B01D53/26 ; C30B33/04 ; C30B33/08 ; E03B3/28 ; C30B33/00 ; C30B33/12 ; H01L21/02
Abstract:
A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
Public/Granted literature
- US20170335488A1 DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2017-11-23
Information query
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