- Patent Title: Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection
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Application No.: US14985037Application Date: 2015-12-30
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Publication No.: US10379254B2Publication Date: 2019-08-13
- Inventor: Abderrezak Marzaki , Yoann Goasduff , Virginie Bidal , Pascal Fornara
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1260912 20121116
- Main IPC: H01H9/02
- IPC: H01H9/02 ; H01H37/42 ; H01H61/013 ; G01V7/04 ; B81B3/00 ; B81C1/00 ; H01L49/02 ; H01H37/04 ; H01H37/32 ; H01L21/3213 ; H01L29/423

Abstract:
A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.
Public/Granted literature
- US20160116631A1 Method for Producing an Integrated Circuit Pointed Element, and Corresponding Integrated Circuit Public/Granted day:2016-04-28
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