- 专利标题： Semiconductor device with localized carrier lifetime reduction and fabrication method thereof
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申请号： US15614030申请日： 2017-06-05
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公开(公告)号： US10381259B2公开(公告)日： 2019-08-13
- 发明人: Alex Kalnitsky , Chih-Wen Yao , Jun Cai , Ruey-Hsin Liu , Hsiao-Chin Tuan
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/762 ; H01L21/8238 ; H01L27/092 ; H01L21/8234 ; H01L29/10
摘要：
A method of fabricating a semiconductor structure includes forming an isolation feature in a substrate, removing a portion of the isolation feature and a portion of the substrate underneath the removed portion of the isolation feature to form a trench in the substrate, and forming a trapping feature around a bottom portion of the trench. A first sidewall and a second sidewall of the trench are in direct contact with the isolation feature, and a bottom surface of the trench is below a bottom surface of the isolation feature.
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