Invention Grant
- Patent Title: Semiconductor device with a layered protection mechanism and associated systems, devices, and methods
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Application No.: US15878755Application Date: 2018-01-24
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Publication No.: US10381329B1Publication Date: 2019-08-13
- Inventor: Wei Zhou , Bret K. Street
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L23/495 ; H01L23/48 ; H01L25/00 ; H01L23/64
Abstract:
A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.
Public/Granted literature
- US20190229090A1 SEMICONDUCTOR DEVICE WITH A LAYERED PROTECTION MECHANISM AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS Public/Granted day:2019-07-25
Information query
IPC分类:
