Invention Grant
- Patent Title: Floating body memory cell having gates favoring different conductivity type regions
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Application No.: US16151175Application Date: 2018-10-03
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Publication No.: US10381350B2Publication Date: 2019-08-13
- Inventor: Peter L. D. Chang , Uygar E. Avci , David Kencke , Ibrahim Ban
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L27/108 ; H01L27/12 ; H01L29/78 ; H01L29/66 ; H01L21/28 ; H01L27/092 ; H01L29/06 ; H01L29/49 ; H01L29/51 ; H01L29/16
Abstract:
A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.
Public/Granted literature
- US20190035790A1 FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIVITY TYPE REGIONS Public/Granted day:2019-01-31
Information query
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