Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15869888Application Date: 2018-01-12
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Publication No.: US10381370B2Publication Date: 2019-08-13
- Inventor: Yoo-cheol Shin , Young-woo Park , Jae-duk Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0135837 20131108
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L27/11578 ; H01L27/11526 ; H01L27/11573 ; H01L27/11551 ; H01L27/11556 ; H01L27/11582 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L27/1157

Abstract:
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.
Public/Granted literature
- US20180138192A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-17
Information query
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