- 专利标题： Tunnel field effect trasnsistor
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申请号： US15764426申请日： 2016-09-27
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公开(公告)号： US10381489B2公开(公告)日： 2019-08-13
- 发明人: Takashi Fukui , Katsuhiro Tomioka
- 申请人： NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY , JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 申请人地址： JP Sapporo-shi, Hokkaido JP Kawaguchi-shi, Saitama
- 专利权人： National University Corporation Hokkaido University,Japan Science and Technology Agency
- 当前专利权人： National University Corporation Hokkaido University,Japan Science and Technology Agency
- 当前专利权人地址： JP Sapporo-shi, Hokkaido JP Kawaguchi-shi, Saitama
- 代理机构： Brundidge & Stanger, P.C.
- 优先权： JP2015-193196 20150930
- 国际申请： PCT/JP2016/078393 WO 20160927
- 国际公布： WO2017/057329 WO 20170604
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L29/778 ; H01L29/78 ; H01L27/095 ; H01L29/808 ; H01L29/812 ; H01L29/06 ; H01L29/04 ; H01L29/205
摘要：
The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
公开/授权文献
- US20180294362A1 TUNNEL FIELD EFFECT TRANSISTOR 公开/授权日：2018-10-11
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