Invention Grant
- Patent Title: Hybrid photon device having etch stop layer and method of fabricating the same
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Application No.: US15805717Application Date: 2017-11-07
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Publication No.: US10381798B2Publication Date: 2019-08-13
- Inventor: Dongsik Shim , Byunggil Jeong , Byounglyong Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2017-0077585 20170619
- Main IPC: H01S5/02
- IPC: H01S5/02 ; H01S5/026 ; H01S5/024 ; H01S5/22 ; H01S5/343

Abstract:
Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, the front and rear etch stop layers formed respectively to either side of the first region in a length direction of the waveguide; and a group III/V light-emitting unit generating light on a region of the silicon substrate between the front and rear etch stop layers.
Public/Granted literature
- US20180366901A1 HYBRID PHOTON DEVICE HAVING ETCH STOP LAYER AND METHOD OF FABRICATING THE SAME Public/Granted day:2018-12-20
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