- 专利标题: Hybrid photon device having etch stop layer and method of fabricating the same
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申请号: US15805717申请日: 2017-11-07
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公开(公告)号: US10381798B2公开(公告)日: 2019-08-13
- 发明人: Dongsik Shim , Byunggil Jeong , Byounglyong Choi
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2017-0077585 20170619
- 主分类号: H01S5/02
- IPC分类号: H01S5/02 ; H01S5/026 ; H01S5/024 ; H01S5/22 ; H01S5/343
摘要:
Provided are a hybrid photon device including an etch stop layer and a method of manufacturing the hybrid photon device. The hybrid photon device includes: a silicon substrate including a waveguide on a surface thereof; a front etch stop layer and a rear etch stop layer disposed on a surface of the waveguide, the front and rear etch stop layers formed respectively to either side of the first region in a length direction of the waveguide; and a group III/V light-emitting unit generating light on a region of the silicon substrate between the front and rear etch stop layers.
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