Invention Grant
- Patent Title: Device for growing monocrystalline crystal
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Application No.: US15353000Application Date: 2016-11-16
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Publication No.: US10385443B2Publication Date: 2019-08-20
- Inventor: Dai-Liang Ma , Hsueh-I Chen , Bo-Cheng Lin , Cheng-Jung Ko , Ying-Cong Zhao , Chih-Wei Kuo , Shu-Yu Yeh
- Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: TW Taoyuan
- Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: TW Taoyuan
- Agency: WPAT, PC
- Priority: TW105127344A 20160826
- Main IPC: C30B29/36
- IPC: C30B29/36 ; C23C14/24 ; C30B23/00 ; C23C14/06 ; C23C14/26 ; C30B23/02 ; C30B23/06 ; C30B29/40

Abstract:
A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.
Public/Granted literature
- US20180057925A1 DEVICE FOR GROWING MONOCRYSTALLINE CRYSTAL Public/Granted day:2018-03-01
Information query
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