Invention Grant
- Patent Title: Capacitor with 3D NAND memory
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Application No.: US15279203Application Date: 2016-09-28
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Publication No.: US10388720B2Publication Date: 2019-08-20
- Inventor: Hang-Ting Lue , Teng-Hao Yeh
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Yiding Wu
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06 ; H01L49/02 ; H01L27/11526 ; H01L27/11548 ; H01L27/11556 ; H01L27/11573 ; H01L27/11575 ; H01L27/11582

Abstract:
An integrated circuit includes a 3D NAND memory array with a stack of conductive strips and a capacitor with a stack of capacitor terminal strips. Multiple conductive strips in the stack of conductive strips, and multiple capacitor terminal strips of the stack of capacitor terminal strips, share a same plurality of plane positions relative to the substrate. Different plane positions in the same plurality of plane positions characterize different capacitor terminal strips in the stack of capacitor terminal strips and different conductive strips in the stack of conductive strips, and a same plane position characterizing both a conductive strip in the stack of conductive strips and a capacitor terminal strip in the stack of capacitor terminal strips indicates that the conductive strip and the capacitor terminal strip have a same vertical position relative to each other.
Public/Granted literature
- US20170018570A1 Capacitor With 3D NAND Memory Public/Granted day:2017-01-19
Information query
IPC分类: