- 专利标题： Semiconductor device
-
申请号： US15911463申请日： 2018-03-05
-
公开(公告)号： US10388774B2公开(公告)日： 2019-08-20
- 发明人: Hideki Sekiguchi
- 申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： White & Case LLP
- 优先权： JP2017-232860 20171204
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/06 ; H01L29/10 ; H01L29/423
摘要：
A semiconductor device includes: a first electrode; a second electrode; a semiconductor region forming region between the first electrode and the second electrode; a first insulating film between the semiconductor region forming region and the second electrode; an actuation gate electrode in the semiconductor region forming region via a second insulating film; a dummy gate electrode, at a distance from the actuation gate electrode, on each of both sides of the actuation gate electrode in the semiconductor region forming region via a third insulating film; a trench contact, in a manner facing the actuation gate electrode, at a position in the third insulating film and between the dummy gate electrode and the semiconductor region forming region; and a contact electrode in the first insulating film and configured to electrically connect the trench contact to the second electrode.
公开/授权文献
- US20190172935A1 SEMICONDUCTOR DEVICE 公开/授权日：2019-06-06
信息查询
IPC分类:
