Invention Grant
- Patent Title: Semiconductor device and method of forming the same
-
Application No.: US15636632Application Date: 2017-06-28
-
Publication No.: US10388788B2Publication Date: 2019-08-20
- Inventor: Shao-Ping Chen , Huan-Chi Ma , Chien-Wen Yu , Kuo-Chin Hung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW106117321A 20170525
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L23/522 ; H01L29/45
Abstract:
A method for forming a semiconductor device is disclosed. A p-type field-effect transistor (p-FET) is formed on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate and completely covers the p-FET. At least an opening is formed in the dielectric layer and exposes a source/drain region of the p-FET. A conductive material is then formed filling the opening, wherein the conductive material comprises a first stress; specifically, a tensile stress between 400 and 800 MPa.
Public/Granted literature
- US20180342618A1 SEMICONDUCTOR DEVICE AND METHOD of FORMING THE SAME Public/Granted day:2018-11-29
Information query
IPC分类:
