Invention Grant
- Patent Title: Memory system and method of operating the same
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Application No.: US15829101Application Date: 2017-12-01
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Publication No.: US10394305B2Publication Date: 2019-08-27
- Inventor: Kwanghyun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0020634 20170215
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F1/3234 ; G11C11/4074 ; G06F3/06 ; G06F12/0871

Abstract:
A memory system according to example embodiments of the inventive concept may include a storage device and a memory device. The storage device includes a first interface circuit configured to be connected to a processor and a second interface circuit different from the first interface circuit. The memory device includes a third interface circuit configured to be connected to the processor based on a DRAM interface, a fourth interface circuit configured to be different from the third interface circuit and configured to be connected to the second interface circuit, and a random access memory divided into a first memory area and a second memory area. The first memory area is accessed by the processor through the third interface circuit and the second memory area is accessed by the storage device through the second interface circuit and the fourth interface circuit.
Public/Granted literature
- US20180232042A1 MEMORY SYSTEM AND METHOD OF OPERATING THE SAME Public/Granted day:2018-08-16
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